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APSEMI PN

APV259AE

Schaltung

1 Form A(SPST-NO)

Beschreibung

SiC SSR RELAY SPST-NO 30mA 1200V, DIP-6

Laststrom

30mA

Montageart

Through Hole

Durchgangswiderstand (Max)

85Ω

Ausgangstyp

AC, DC

Paket

DIP-6

Verpackung

Tube

Serie

Photo-MOS-Solid-State-Relais

Ausschalten

20us

Einschalten

250us

Spannungseingang

1.1 ~ 1.5VDC

Spannung - Last

0V~1200V

Specifications & Application Scenarios

Specifications: The APV259AE is a high-voltage Silicon Carbide (SiC) PhotoMOS SSR in a DIP-6 through-hole package. It is a 1 Form A (SPST-NO) relay capable of switching up to 1200V AC/DC with a 30mA current rating. It has an 85Ω on-state resistance, provides 5000Vrms isolation, and switches with 250μs (turn-on) and a fast 20μs (turn-off) time. It is designed for harsh environments with an operating range of -40°C to 85℃ and is controlled by 1.1-1.5VDC. Application Scenarios: Targeting high-voltage, low-current applications that demand the superior reliability and performance of SiC technology. Ideal for medical equipment like electrosurgical units, high-voltage power supply control and monitoring, industrial insulation testers, photomultiplier tube and CRT anode supplies, and any application where high breakdown voltage, fast switching, and long-term stability at extreme potentials are critical.

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