| Modelo |
AC3M0065100K |
|---|---|
| Descripción |
SiC MOSFET N-CH 1000V 33A TO-247-4 |
| Serie |
Silicon Carbide |
| FET Type |
N-Channel |
| DrainVoltage(Vdss) |
1000V |
| Current |
33A |
| Drive Voltage |
15V |
| Vgs (Max) |
+19V, -8V |
| Rds On |
65mΩ |
| Vgs(th) |
2.1V |
| Gate Charge (Qg) |
33 nC |
| Input Capacitance (Ciss) |
710 pF |
| Power Dissipation |
115W |
| Operating Temperature (℃) |
-55°C ~ 150°C |
| Tipo de montaje |
Agujero pasante |
| Paquete |
TO-247-4 |
Specifications & Application Scenarios
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