| Modelo | AC3M0065090D |
|---|---|
| Descripción | SiC MOSFET N-CH 900V 37A TO-247-3 |
| Technology | Silicon Carbide |
| FET Type | N-Channel |
| Paquete | TO-247-3 |
| Drain to Source Voltage | 900V |
| Continuous Drain Current (ID) | 37A |
| Gate Drive Voltage (Vgs) | 15V |
| Vgs (Max) | -8V, +19V |
| Rds(on) | 65mΩ |
| Vgs(th) | 2.1V |
| Gate Charge (Qg) | 33 nC |
| Input Capacitance (Ciss) | 710 pF |
| Max Power Dissipation | 120W |
| Operating Temperature (°C) | -55 ~ 150 |
| Tipo de montaje | Agujero pasante |
Specifications & Application Scenarios
Specifications: The AC3M0065090D is a 900V, 37A SiC MOSFET with a 65mΩ on-resistance. Designed for 15V/-8V gate drive, it has a low Vgs(th) of 2.1V. A key feature is its very low total gate charge of 33nC. Rated for 120W, it operates from -55°C to 150°C.
Application Scenarios: This device is tailored for applications benefiting from 900V blocking. It is well-suited for PFC stages in 480V three-phase industrial supplies, main switch in high-voltage LED drivers, and plasma generator power supplies.
Application Scenarios: This device is tailored for applications benefiting from 900V blocking. It is well-suited for PFC stages in 480V three-phase industrial supplies, main switch in high-voltage LED drivers, and plasma generator power supplies.
Productos relacionados
DIRECCIÓN：
17F, North Industrial Building, No. 3003 Shennan Road, Futian District, Shenzhen, China
TEL：
+86-755-83-666-556
+86-755-83-666-557
+86-755-83-666-558
Correo electrónico：
apsemi@a-semi.com
sales@a-semi.com
design@a-semi.com
©2026 APSEMI CO.,LTD