| Модель |
AC3M0065090D |
|---|---|
| Описание |
SiC MOSFET N-CH 900V 37A TO-247-3 |
| Technology |
Silicon Carbide |
| FET Type |
N-Channel |
| Пакет |
TO-247-3 |
| Drain to Source Voltage |
900V |
| Continuous Drain Current (ID) |
37A |
| Gate Drive Voltage (Vgs) |
15V |
| Vgs (Max) |
-8V, +19V |
| Rds(on) |
65mΩ |
| Vgs(th) |
2.1V |
| Gate Charge (Qg) |
33 nC |
| Input Capacitance (Ciss) |
710 pF |
| Max Power Dissipation |
120W |
| Operating Temperature (°C) |
-55 ~ 150 |
| Тип крепления |
Through Hole |
Specifications & Application Scenarios
Specifications: The AC3M0065090D is a 900V, 37A SiC MOSFET with a 65mΩ on-resistance. Designed for 15V/-8V gate drive, it has a low Vgs(th) of 2.1V. A key feature is its very low total gate charge of 33nC. Rated for 120W, it operates from -55°C to 150°C.
Application Scenarios: This device is tailored for applications benefiting from 900V blocking. It is well-suited for PFC stages in 480V three-phase industrial supplies, main switch in high-voltage LED drivers, and plasma generator power supplies.
Application Scenarios: This device is tailored for applications benefiting from 900V blocking. It is well-suited for PFC stages in 480V three-phase industrial supplies, main switch in high-voltage LED drivers, and plasma generator power supplies.
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