| Modelo | AC3M0120065D |
|---|---|
| Descripción | SiC MOSFET N-CH 650V 23A TO-247-3 |
| Technology | Silicon Carbide |
| FET Type | N-Channel |
| Paquete | TO-247-3 |
| Drain to Source Voltage | 650V |
| Continuous Drain Current (ID) | 23A |
| Gate Drive Voltage (Vgs) | 15V |
| Vgs (Max) | +19V, -8V |
| Rds(on) | 120mΩ |
| Vgs(th) | 2.3V |
| Gate Charge (Qg) | 26 nC |
| Input Capacitance (Ciss) | 588 pF |
| Max Power Dissipation | 97W |
| Operating Temperature (°C) | -40 ~ 175 |
| Tipo de montaje | Agujero pasante |
Specifications & Application Scenarios
Specifications: The AC3M0120065D is a 650V, 23A SiC MOSFET with a 120mΩ on-resistance. It operates with a +19V/-8V gate drive and has a Vgs(th) of 2.3V. It features a very low total gate charge of 26nC. Rated for 97W, it operates up to 175°C.
Application Scenarios: This low-power SiC MOSFET is perfect for upgrading silicon-based designs. It is ideal for high-efficiency server fan motor drives, primary switch in high-power USB-PD adapters, and digital lighting ballasts.
Application Scenarios: This low-power SiC MOSFET is perfect for upgrading silicon-based designs. It is ideal for high-efficiency server fan motor drives, primary switch in high-power USB-PD adapters, and digital lighting ballasts.
Productos relacionados
DIRECCIÓN：
17F, North Industrial Building, No. 3003 Shennan Road, Futian District, Shenzhen, China
TEL：
+86-755-83-666-556
+86-755-83-666-557
+86-755-83-666-558
Correo electrónico：
apsemi@a-semi.com
sales@a-semi.com
design@a-semi.com
©2026 APSEMI CO.,LTD