| Modelo |
AC3M0032120D |
|---|---|
| Descripción |
SiC MOSFET N-CH 1200V 64A TO-247-3 |
| Serie |
Silicon Carbide |
| FET Type |
N-Channel |
| DrainVoltage(Vdss) |
1200V |
| Current |
64A |
| Drive Voltage |
15V |
| Vgs (Max) |
+15V, -4V |
| Rds On |
32mΩ |
| Vgs(th) |
2.5V |
| Gate Charge (Qg) |
113 nC |
| Input Capacitance (Ciss) |
3180 pF |
| Power Dissipation |
288W |
| Operating Temperature (℃) |
-40°C ~ 175°C |
| Tipo de montaje |
Agujero pasante |
| Paquete |
TO-247-3 |
Specifications & Application Scenarios
Productos relacionados
DIRECCIÓN：
17F, North Industrial Building, No. 3003 Shennan Road, Futian District, Shenzhen, China
TEL：
+86-755-83-666-556
+86-755-83-666-557
+86-755-83-666-558
Correo electrónico：
apsemi@a-semi.com
sales@a-semi.com
design@a-semi.com
©2026 APSEMI CO.,LTD