| الطراز | AC3M0032120D |
|---|---|
| الوصف | SiC MOSFET N-CH 1200V 64A TO-247-3 |
| Technology | Silicon Carbide |
| FET Type | N-Channel |
| الحزمة | تو-247-3 |
| Drain to Source Voltage | 1200V |
| Continuous Drain Current (ID) | 64A |
| Gate Drive Voltage (Vgs) | 15V |
| Vgs (Max) | +15V, -4V |
| Rds(on) | 32mΩ |
| Vgs(th) | 2.5V |
| Gate Charge (Qg) | 113 nC |
| سعة الإدخال (Ciss) | 3180 pF |
| Max Power Dissipation | 288W |
| Operating Temperature (°C) | -40 ~ 175 |
| نوع التركيب | Through Hole |
Specifications & Application Scenarios
Specifications: The AC3M0032120D is a 1200V, 64A SiC MOSFET designed for a +15V/-4V gate drive. It features a 32mΩ on-resistance and a Vgs(th) of 2.5V. The total gate charge is 113nC. The device can dissipate 288W and is rated for operation up to 175°C.
Application Scenarios: This MOSFET is well-suited for medium-power 1200V applications like solar string inverters, active clamp circuits of off-line power supplies, and solid-state circuit breakers in DC microgrids.
Application Scenarios: This MOSFET is well-suited for medium-power 1200V applications like solar string inverters, active clamp circuits of off-line power supplies, and solid-state circuit breakers in DC microgrids.
المنتجات ذات الصلة
العنوان:：
17F، المبنى الصناعي الشمالي، رقم 3003 طريق شينان، منطقة فوتيان، شينزين، الصين
تل ：
+86-755-83-666-556
+86-755-83-666-557
+86-755-83-666-558
البريد الإلكتروني：البريد الإلكتروني
apsemi@a-semi.com
sales@a-semi.com
design@a-semi.com
©2026 APSEMI co.,ltd.