| Модель |
AC3M0032120D |
|---|---|
| Описание |
SiC MOSFET N-CH 1200V 64A TO-247-3 |
| Technology |
Silicon Carbide |
| FET Type |
N-Channel |
| Пакет |
TO-247-3 |
| Drain to Source Voltage |
1200V |
| Continuous Drain Current (ID) |
64A |
| Gate Drive Voltage (Vgs) |
15V |
| Vgs (Max) |
+15V, -4V |
| Rds(on) |
32mΩ |
| Vgs(th) |
2.5V |
| Gate Charge (Qg) |
113 nC |
| Input Capacitance (Ciss) |
3180 pF |
| Max Power Dissipation |
288W |
| Operating Temperature (°C) |
-40 ~ 175 |
| Тип крепления |
Through Hole |
Specifications & Application Scenarios
Specifications: The AC3M0032120D is a 1200V, 64A SiC MOSFET designed for a +15V/-4V gate drive. It features a 32mΩ on-resistance and a Vgs(th) of 2.5V. The total gate charge is 113nC. The device can dissipate 288W and is rated for operation up to 175°C.
Application Scenarios: This MOSFET is well-suited for medium-power 1200V applications like solar string inverters, active clamp circuits of off-line power supplies, and solid-state circuit breakers in DC microgrids.
Application Scenarios: This MOSFET is well-suited for medium-power 1200V applications like solar string inverters, active clamp circuits of off-line power supplies, and solid-state circuit breakers in DC microgrids.
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