| Модель | AC3M0030090K |
|---|---|
| Описание | SiC MOSFET N-CH 900V 74A TO-247-4 |
| Technology | Silicon Carbide |
| FET Type | N-Channel |
| Пакет | TO-247-4 |
| Drain to Source Voltage | 900V |
| Continuous Drain Current (ID) | 74A |
| Gate Drive Voltage (Vgs) | 15V |
| Vgs (Max) | -8V, +19V |
| Rds(on) | 30mΩ |
| Vgs(th) | 2.4V |
| Gate Charge (Qg) | 72 nC |
| Input Capacitance (Ciss) | 1358 pF |
| Max Power Dissipation | 243 W |
| Operating Temperature (°C) | -40 ~ 150 |
| Тип крепления | Through Hole |
Specifications & Application Scenarios
Specifications: The AC3M0030090K is a 900V, 74A SiC MOSFET in a TO-247-4 Kelvin source package. It features a 30mΩ on-resistance and a low total gate charge of 72nC. It is rated for 243W and operates from -40°C to 150°C.
Application Scenarios: This device bridges 650V and 1200V parts, ideal for 800V bus architectures in EVs. It is suited for main switches in onboard chargers (OBC) and DC-DC converters for 800V EV platforms, and for medium-voltage industrial motor drives.
Application Scenarios: This device bridges 650V and 1200V parts, ideal for 800V bus architectures in EVs. It is suited for main switches in onboard chargers (OBC) and DC-DC converters for 800V EV platforms, and for medium-voltage industrial motor drives.
Сопутствующие товары
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