| Modèle |
AC3M0065100K |
|---|---|
| Description |
SiC MOSFET N-CH 1000V 33A TO-247-4 |
| Technology |
Silicon Carbide |
| FET Type |
N-Channel |
| Paquet |
TO-247-4 |
| Drain to Source Voltage |
1000V |
| Continuous Drain Current (ID) |
33A |
| Gate Drive Voltage (Vgs) |
15V |
| Vgs (Max) |
+19V, -8V |
| Rds(on) |
65mΩ |
| Vgs(th) |
2.1V |
| Gate Charge (Qg) |
33 nC |
| Input Capacitance (Ciss) |
710 pF |
| Max Power Dissipation |
115W |
| Operating Temperature (°C) |
-55 ~ 150 |
| Type de montage |
Trou de passage |
Specifications & Application Scenarios
Specifications: The AC3M0065100K is a 1000V, 33A SiC MOSFET in a TO-247-4 Kelvin source package. It features a 65mΩ on-resistance and a 33nC gate charge. Rated for 115W, it operates from -55°C to 150°C.
Application Scenarios: The combination of 1000V rating, Kelvin source, and fast switching makes this ideal for high-voltage, high-frequency auxiliary power supplies within EV traction inverters, switching elements in high-power laser diode drivers, and advanced scientific equipment power supplies.
Application Scenarios: The combination of 1000V rating, Kelvin source, and fast switching makes this ideal for high-voltage, high-frequency auxiliary power supplies within EV traction inverters, switching elements in high-power laser diode drivers, and advanced scientific equipment power supplies.
Produits apparentés
ADDRESS：
17F, North Industrial Building, No. 3003 Shennan Road, Futian District, Shenzhen, Chine
TEL：
+86-755-83-666-556
+86-755-83-666-557
+86-755-83-666-558
E-mail：
apsemi@a-semi.com
sales@a-semi.com
design@a-semi.com
©2026 APSEMI CO.,LTD