Modèle

AC4D10120D

Description

SIC SCHOTTKY DIODES,1200V,10A,TO-247-3

Technology

SiC (Silicon Carbide) Schottky

Paquet

TO-247-3

Reverse Voltage (Vrrm)

Forward Voltage (VF)

1.4 V

Max Power Dissipation

187 W

Capacitance Charge (QC)

27 nC

Operating Temperature (°C)

-55°C ~ 175°C

Type de montage

Trou de passage

Specifications & Application Scenarios

Specifications: The AC4D10120D is a 1200V, 10A SiC Schottky diode in TO-247-3. It has V_F=1.4V, P_TOT=187W, and Q_C=27nC. It combines medium current with high voltage blocking capability. Application Scenarios: For 800V bus systems with moderate current. Used in solar micro-inverters, EV auxiliary power modules, and mid-power 3-phase drives. The TO-247-3 package ensures good thermal dissipation.

Produits apparentés

ADDRESS:

17F, North Industrial Building, No. 3003 Shennan Road, Futian District, Shenzhen, Chine

TEL:

+86-755-83-666-556
+86-755-83-666-557
+86-755-83-666-558

E-mail:

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sales@a-semi.com
design@a-semi.com

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