APSEMI PN

APV215G2E

Circuit

1 Forme A (SPST-NO)

Description

SSR RELAY SPST-NO 2A 100V, DIP-6

Courant de charge

2.0A

Type de montage

Trou de passage

Résistance à l'état passant (Max)

0.15Ω

Type de sortie

AC, DC

Paquet

DIP-6

Emballage

Tube

Série

Relais à semi-conducteurs Photo MOS

Mise hors tension

350us

Mise en marche

1000us

Entrée tension

1.2 ~ 1.4VDC

Tension - Charge

0V~100V

Specifications & Application Scenarios

Specifications: The APV215G2E is a high-current PhotoMOS SSR in a DIP-6 package. This 1 Form A (SPST-NO) device is rated for 2.0A at 100V AC/DC. It features a low 0.15惟 on-state resistance, provides 5000Vrms isolation, and has switching times of 1000渭s (on) and 350渭s (off). It operates from -40掳C to 85掳C with 1.2-1.4VDC input. Application Scenarios: Suited for applications requiring robust, high-current switching with controlled turn-on. The slower turn-on helps limit inrush current, making it ideal for driving inductive loads like motor starters, transformers, or capacitive loads. Applications include industrial motor control, power supply soft-start circuits, and high-power actuator drives, benefiting from the thermal mass of the DIP package.

Produits apparentés

ADDRESS:

17F, North Industrial Building, No. 3003 Shennan Road, Futian District, Shenzhen, Chine

TEL:

+86-755-83-666-556
+86-755-83-666-557
+86-755-83-666-558

E-mail:

apsemi@a-semi.com
sales@a-semi.com
design@a-semi.com

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