APSEMI PN

APV252GAE

Circuit

1 Forme A (SPST-NO)

Description

SSR RELAY SPST-NO 3.5A 60V, DIP-6

Courant de charge

3.5A

Type de montage

Trou de passage

Résistance à l'état passant (Max)

40mΩ

Type de sortie

AC, DC

Paquet

DIP-6

Emballage

Tube

Série

Relais à semi-conducteurs Photo MOS

Mise hors tension

100us

Mise en marche

800us

Entrée tension

1.3 ~ 3.0VDC

Tension - Charge

0V~60V

Specifications & Application Scenarios

Specifications: The APV252GAE is the through-hole DIP-6 version of a high-current, low-loss PhotoMOS SSR. It is a 1 Form A (SPST-NO) relay rated for 3.5A at 60V AC/DC. Its key feature is an extremely low 40mΩ on-state resistance. It maintains 5000Vrms isolation and switches with 800μs (turn-on) and 100μs (turn-off) times. It operates from -40°C to 85℃ and accepts a wider 1.3-3.0VDC input range. Application Scenarios: Engineered for the same high-efficiency power switching as the SMD version, but in a through-hole package. Perfect for high-current applications in industrial control panels, power distribution units, motor drives, and battery management systems where the DIP package’s inherent thermal mass and mechanical robustness are advantageous for heat dissipation and long-term reliability in demanding environments.

Produits apparentés

ADDRESS:

17F, North Industrial Building, No. 3003 Shennan Road, Futian District, Shenzhen, Chine

TEL:

+86-755-83-666-556
+86-755-83-666-557
+86-755-83-666-558

E-mail:

apsemi@a-semi.com
sales@a-semi.com
design@a-semi.com

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