PRINCIPAUX PRODUITS
| APSEMI PN |
APV256E |
|---|---|
| Circuit |
1 Forme A (SPST-NO) |
| Description |
SSR RELAY SPST-NO 80mA 600V, DIP-6 |
| Courant de charge |
80mA |
| Type de montage |
Trou de passage |
| Résistance à l'état passant (Max) |
35Ω |
| Type de sortie |
AC, DC |
| Paquet |
DIP-6 |
| Emballage |
Tube |
| Série |
Relais à semi-conducteurs Photo MOS |
| Mise hors tension |
20us |
| Mise en marche |
500us |
| Entrée tension |
1.2 ~ 1.5VDC |
| Tension - Charge |
0V~600V |
Specifications & Application Scenarios
Specifications: The APV256E is the through-hole DIP-6 version of a high-voltage, low-current PhotoMOS SSR. It is a 1 Form A (SPST-NO) relay rated for 80mA at 600V AC/DC. It has a 35Ω on-state resistance, provides 3750Vrms isolation, and switches with 500μs (on) and 20μs (off) times. It operates from -40°C to 85℃ with a 1.2-1.5VDC control input. Application Scenarios: Suited for the same high-voltage, low-current signal switching as the SMD version, but where through-hole mounting is preferred. Common in high-voltage test equipment development, laboratory power supplies, medical device prototyping, industrial instrumentation, and any application requiring safe handling of high potentials with the repairability and thermal mass of a DIP package.
Produits apparentés
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