APSEMI PN

APV256E

Circuit

1 Forme A (SPST-NO)

Description

SSR RELAY SPST-NO 80mA 600V, DIP-6

Courant de charge

80mA

Type de montage

Trou de passage

Résistance à l'état passant (Max)

35Ω

Type de sortie

AC, DC

Paquet

DIP-6

Emballage

Tube

Série

Relais à semi-conducteurs Photo MOS

Mise hors tension

20us

Mise en marche

500us

Entrée tension

1.2 ~ 1.5VDC

Tension - Charge

0V~600V

Specifications & Application Scenarios

Specifications: The APV256E is the through-hole DIP-6 version of a high-voltage, low-current PhotoMOS SSR. It is a 1 Form A (SPST-NO) relay rated for 80mA at 600V AC/DC. It has a 35Ω on-state resistance, provides 3750Vrms isolation, and switches with 500μs (on) and 20μs (off) times. It operates from -40°C to 85℃ with a 1.2-1.5VDC control input. Application Scenarios: Suited for the same high-voltage, low-current signal switching as the SMD version, but where through-hole mounting is preferred. Common in high-voltage test equipment development, laboratory power supplies, medical device prototyping, industrial instrumentation, and any application requiring safe handling of high potentials with the repairability and thermal mass of a DIP package.

Produits apparentés

ADDRESS:

17F, North Industrial Building, No. 3003 Shennan Road, Futian District, Shenzhen, Chine

TEL:

+86-755-83-666-556
+86-755-83-666-557
+86-755-83-666-558

E-mail:

apsemi@a-semi.com
sales@a-semi.com
design@a-semi.com

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