APSEMI PN

APV278AE

Circuit

1 Forme A (SPST-NO)

Description

SiC SSR RELAY SPST-NO 30mA 1800V, DIP-5

Courant de charge

30mA

Type de montage

Trou de passage

Résistance à l'état passant (Max)

88Ω

Type de sortie

AC, DC

Paquet

DIP-5

Emballage

Tube

Série

Relais à semi-conducteurs Photo MOS

Mise hors tension

50us

Mise en marche

80us

Entrée tension

1.33 ~ 1.5VDC

Tension - Charge

0V~1800V

Specifications & Application Scenarios

Specifications: The APV278AE is a very high-voltage Silicon Carbide (SiC) PhotoMOS SSR in a DIP-5 package. It is a 1 Form A (SPST-NO) relay capable of switching up to 1800V AC/DC with a 30mA current rating. It features an 88Ω on-state resistance, provides 5000Vrms of reinforced isolation, and switches in 80μs (on) and 50μs (off). It is designed for harsh environments with an operating range of -40°C to 85°C and is controlled by 1.33-1.5VDC. Application Scenarios: Targeting specialized high-voltage, low-current applications. It is well-suited for medical imaging equipment (e.g., CT scanners, X-ray power supplies), industrial high-voltage test and measurement instruments, electrostatic applications, particle detector power supplies in scientific research, and high-voltage power supply modules in telecommunications and industrial equipment where extreme voltage isolation and SiC reliability are paramount.

Produits apparentés

ADDRESS:

17F, North Industrial Building, No. 3003 Shennan Road, Futian District, Shenzhen, Chine

TEL:

+86-755-83-666-556
+86-755-83-666-557
+86-755-83-666-558

E-mail:

apsemi@a-semi.com
sales@a-semi.com
design@a-semi.com

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