APSEMI PN

APV278G1EH

Circuit

1 Forme A (SPST-NO)

Description

SiC SSR RELAY SPST-NO 450mA 1800V, SMD-5

Courant de charge

450mA

Type de montage

Montage en surface

Résistance à l'état passant (Max)

1.8Ω

Type de sortie

AC, DC

Paquet

SMD-5

Emballage

Tape & Reel

Série

Relais à semi-conducteurs Photo MOS

Mise hors tension

50us

Mise en marche

750us

Entrée tension

1.33 ~ 1.5VDC

Tension - Charge

0V~1800V

Specifications & Application Scenarios

Specifications: The APV278G1EH is a very high-voltage, medium-current Silicon Carbide (SiC) PhotoMOS SSR in an SMD-5 package. It is a 1 Form A (SPST-NO) relay capable of switching up to 1800V AC/DC with a 450mA current rating. It features a relatively low 1.8Ω on-state resistance (for its voltage), provides 5000Vrms isolation, and switches with 750μs (on) and 50μs (off) times. It operates from -40°C to 85℃ and is controlled by 1.33-1.5VDC. Application Scenarios: Targeting specialized applications requiring high voltage, medium current, and SiC reliability in a compact SMD package. Ideal for advanced medical imaging (CT, PET), industrial high-power RF amplifiers, particle accelerator subsystems, high-voltage pulse generators, and next-generation power conversion systems in aerospace and defense.

Produits apparentés

ADDRESS:

17F, North Industrial Building, No. 3003 Shennan Road, Futian District, Shenzhen, Chine

TEL:

+86-755-83-666-556
+86-755-83-666-557
+86-755-83-666-558

E-mail:

apsemi@a-semi.com
sales@a-semi.com
design@a-semi.com

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