APSEMI PN

APW216AE

Circuit

2 Forme A (SPST-NO)

Description

SSR RELAY SPST-NO 200mA 600V, DIP-8

Courant de charge

200mA

Type de montage

Trou de passage

Résistance à l'état passant (Max)

3.5Ω

Type de sortie

AC, DC

Paquet

DIP-8

Emballage

Tube

Série

Relais à semi-conducteurs Photo MOS

Mise hors tension

40us

Mise en marche

1000us

Entrée tension

1.2 ~ 1.5VDC

Tension - Charge

0V~600V

Specifications & Application Scenarios

Specifications: The APW216AE is a dual-channel (2 Form A), high-voltage PhotoMOS SSR in a through-hole DIP-8 package. Each channel is a 1 Form A (SPST-NO) switch capable of handling 200mA at up to 600V AC/DC. Each channel features a low 3.5Ω on-state resistance, provides high 5000Vrms isolation, and has switching times of 1000μs (turn-on) and 40μs (turn-off). It is designed for harsh environments with an operating temperature range of -40°C to 85℃ and uses a 1.2-1.5VDC control input. Application Scenarios: Engineered for applications requiring two independent, isolated switches for medium-current, high-voltage circuits, where through-hole mounting is preferred. It is suitable for high-voltage power supply control, medical equipment development platforms, industrial test benches, and scientific research setups that value the mechanical robustness, serviceability, and enhanced thermal performance offered by the DIP package.

Produits apparentés

ADDRESS:

17F, North Industrial Building, No. 3003 Shennan Road, Futian District, Shenzhen, Chine

TEL:

+86-755-83-666-556
+86-755-83-666-557
+86-755-83-666-558

E-mail:

apsemi@a-semi.com
sales@a-semi.com
design@a-semi.com

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