APSEMI PN

APW251G2E

Circuit

2 Forme A (SPST-NO)

Description

SSR RELAY SPST-NO 2.5A 40V, DIP-8

Courant de charge

2.5A

Type de montage

Trou de passage

Résistance à l'état passant (Max)

60mΩ

Type de sortie

AC, DC

Paquet

DIP-8

Emballage

Tube

Série

Relais à semi-conducteurs Photo MOS

Mise hors tension

20us

Mise en marche

800us

Entrée tension

1.2 ~ 1.4VDC

Tension - Charge

0V~40V

Specifications & Application Scenarios

Specifications: The APW251G2E is a dual-channel (2 Form A), high-current PhotoMOS SSR in a through-hole DIP-8 package. Each channel is a 1 Form A (SPST-NO) switch rated for 2.5A at 40V AC/DC. Each channel features an ultra-low 60mΩ on-state resistance, provides 3750Vrms isolation, and switches with 800μs (turn-on) and a very fast 20μs (turn-off) time. It is designed for reliable operation from -40°C to 85℃ with a 1.2-1.4VDC control input. Application Scenarios: Designed for high-current dual-switching applications where the thermal mass and mechanical robustness of through-hole mounting are beneficial, such as in prototyping or high-reliability systems. Ideal for industrial motor control boards, high-current power supply modules, battery test equipment, robotics driver circuits, and as a robust switch in electric vehicle auxiliary systems, combining high efficiency with excellent thermal performance.

Produits apparentés

ADDRESS:

17F, North Industrial Building, No. 3003 Shennan Road, Futian District, Shenzhen, Chine

TEL:

+86-755-83-666-556
+86-755-83-666-557
+86-755-83-666-558

E-mail:

apsemi@a-semi.com
sales@a-semi.com
design@a-semi.com

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