APSEMI PN

APY258AE

Circuit

1 Forme A (SPST-NO)

Description

SiC SSR RELAY SPST-NO 30mA 1500V, DIP-4

Courant de charge

30mA

Type de montage

Trou de passage

Résistance à l'état passant (Max)

88Ω

Type de sortie

AC, DC

Paquet

DIP-4

Emballage

Tube

Série

Relais à semi-conducteurs Photo MOS

Mise hors tension

50us

Mise en marche

80us

Entrée tension

1.33 ~ 1.5VDC

Tension - Charge

0V~1500V

Specifications & Application Scenarios

Specifications: The APY258AE is a high-voltage Silicon Carbide (SiC) PhotoMOS SSR in an ultra-compact DIP-4 through-hole package. It is a 1 Form A (SPST-NO) relay capable of switching up to 1500V AC/DC with a 30mA current rating. It has an 88Ω on-state resistance, provides 5000Vrms isolation, and switches in 80μs (on) and 50μs (off). It operates from -40°C to 85℃ and is controlled by 1.33-1.5VDC. Application Scenarios: Targeting high-voltage, low-current applications where an extremely small through-hole footprint is critical. Ideal for high-voltage bias supplies in compact scientific instruments, portable medical devices, high-voltage probe circuits, and as a space-saving isolation component in high-density, high-voltage test and measurement equipment, leveraging SiC reliability in a miniature package.

Produits apparentés

ADDRESS:

17F, North Industrial Building, No. 3003 Shennan Road, Futian District, Shenzhen, Chine

TEL:

+86-755-83-666-556
+86-755-83-666-557
+86-755-83-666-558

E-mail:

apsemi@a-semi.com
sales@a-semi.com
design@a-semi.com

©2026 APSEMI CO.,LTD