| Model | |
|---|---|
| Description | |
| Series | |
| Operating Temperature (℃) | |
| Model | |
| Description |
SiC MOS (Silicon Carbide)AC2M1000170D 1700V 4.9A |
| FET Type |
N-Channel |
| DrainVoltage(Vdss) |
1700V |
| Current |
4.9A |
| Drive Voltage |
20V |
| Vgs (Max) |
+25V, -10V |
| Rds On |
1000mΩ |
| Vgs(th) |
4V |
| Gate Charge (Qg) |
13 nC |
| Input Capacitance (Ciss) |
191 pF |
| Power Dissipation |
69W |
| Operating Temperature (℃) | |
| Mounting Type |
Through Hole |
| Package |
TO-247-3 |
Related products
ADDRESS：
17F, North Industrial Building, No. 3003 Shennan Road, Futian District, Shenzhen, Chine
TEL：
+86-755-83-666-556
+86-755-83-666-557
+86-755-83-666-558
E-mail：
apsemi@a-semi.com
sales@a-semi.com
design@a-semi.com
©2026 APSEMI CO.,LTD