| Model | AC2M1000170D |
|---|---|
| Description | SiC MOSFET N-CH 1700V 6A TO-247-3 |
| Technology | Silicon Carbide |
| FET Type | N-Channel |
| Gói | TO-247-3 |
| Drain to Source Voltage | 1700V |
| Continuous Drain Current (ID) | 6A |
| Gate Drive Voltage (Vgs) | 20V |
| Vgs (Max) | +25V, -10V |
| Rds(on) | 800mΩ |
| Vgs(th) | 2.8V |
| Gate Charge (Qg) | 20 nC |
| Input Capacitance (Ciss) | 160 pF |
| Max Power Dissipation | 69W |
| Operating Temperature (°C) | -55 ~ 150 |
| Mounting Type | Through Hole |
Specifications & Application Scenarios
Specifications* The AC2M1000170D is a specialized ultra-high-voltage SiC MOSFET rated for 1700V. It features an on-resistance of 800mΩ and is designed for 20V gate drive operation (+25V/-10V max). The gate threshold voltage is 2.8V. It has a very low gate charge (20nC) and input capacitance (160pF), enabling efficient high-frequency operation. The device is rated for 69W and operates from -55°C to 150°C.
Application Scenarios: Designed for niche applications requiring the highest voltage blocking. It is ideal for photomultiplier tube (PMT) bias supplies, electrostatic controls in semiconductor manufacturing, and as a series protection switch in high-voltage test equipment like oscilloscope probes.
Application Scenarios: Designed for niche applications requiring the highest voltage blocking. It is ideal for photomultiplier tube (PMT) bias supplies, electrostatic controls in semiconductor manufacturing, and as a series protection switch in high-voltage test equipment like oscilloscope probes.
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