| Modèle |
AC2M1000170D |
|---|---|
| Description |
SiC MOSFET N-CH 1700V 6A TO-247-3 |
| Technology |
Silicon Carbide |
| FET Type |
N-Channel |
| Paquet |
TO-247-3 |
| Drain to Source Voltage |
1700V |
| Continuous Drain Current (ID) |
6A |
| Gate Drive Voltage (Vgs) |
20V |
| Vgs (Max) |
+25V, -10V |
| Rds(on) |
800mΩ |
| Vgs(th) |
2.8V |
| Gate Charge (Qg) |
20 nC |
| Input Capacitance (Ciss) |
160 pF |
| Max Power Dissipation |
69W |
| Operating Temperature (°C) |
-55 ~ 150 |
| Type de montage |
Trou de passage |
Specifications & Application Scenarios
Specifications* The AC2M1000170D is a specialized ultra-high-voltage SiC MOSFET rated for 1700V. It features an on-resistance of 800mΩ and is designed for 20V gate drive operation (+25V/-10V max). The gate threshold voltage is 2.8V. It has a very low gate charge (20nC) and input capacitance (160pF), enabling efficient high-frequency operation. The device is rated for 69W and operates from -55°C to 150°C.
Application Scenarios: Designed for niche applications requiring the highest voltage blocking. It is ideal for photomultiplier tube (PMT) bias supplies, electrostatic controls in semiconductor manufacturing, and as a series protection switch in high-voltage test equipment like oscilloscope probes.
Application Scenarios: Designed for niche applications requiring the highest voltage blocking. It is ideal for photomultiplier tube (PMT) bias supplies, electrostatic controls in semiconductor manufacturing, and as a series protection switch in high-voltage test equipment like oscilloscope probes.
Produits apparentés
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