| Model | AC3M0015065D |
|---|---|
| Description | SiC MOSFET N-CH 650V 122A TO-247-3 |
| Technology | Silicon Carbide |
| FET Type | N-Channel |
| Gói | TO-247-3 |
| Drain to Source Voltage | 650V |
| Continuous Drain Current (ID) | 122A |
| Gate Drive Voltage (Vgs) | 15V |
| Vgs (Max) | -8V, +19V |
| Rds(on) | 15mΩ |
| Vgs(th) | 2.4V |
| Gate Charge (Qg) | 190 nC |
| Input Capacitance (Ciss) | 4960 pF |
| Max Power Dissipation | 420W |
| Operating Temperature (°C) | -40 ~ 175 |
| Mounting Type | Through Hole |
Specifications & Application Scenarios
Specifications: The AC3M0015065D is a high-current-density 650V SiC MOSFET rated for 122A. It achieves an ultra-low on-resistance of 15mΩ. Designed for a 15V gate drive (-8V/+19V max), it has a Vgs(th) of 2.4V. The device has a total gate charge of 190nC and an input capacitance of 4960pF. It can handle 420W and operates at junction temperatures up to 175°C.
Application Scenarios: This MOSFET is a cornerstone for high-efficiency, medium-voltage power conversion. It is ideally deployed in three-phase motor drives for industrial automation and EVs, in high-output server/telecom PSUs, and in bidirectional DC-DC converters for battery energy storage systems (BESS).
Application Scenarios: This MOSFET is a cornerstone for high-efficiency, medium-voltage power conversion. It is ideally deployed in three-phase motor drives for industrial automation and EVs, in high-output server/telecom PSUs, and in bidirectional DC-DC converters for battery energy storage systems (BESS).
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