| Модель |
AC3M0015065D |
|---|---|
| Описание |
SiC MOSFET N-CH 650V 122A TO-247-3 |
| Technology |
Silicon Carbide |
| FET Type |
N-Channel |
| Пакет |
TO-247-3 |
| Drain to Source Voltage |
650V |
| Continuous Drain Current (ID) |
122A |
| Gate Drive Voltage (Vgs) |
15V |
| Vgs (Max) |
-8V, +19V |
| Rds(on) |
15mΩ |
| Vgs(th) |
2.4V |
| Gate Charge (Qg) |
190 nC |
| Input Capacitance (Ciss) |
4960 pF |
| Max Power Dissipation |
420W |
| Operating Temperature (°C) |
-40 ~ 175 |
| Тип крепления |
Through Hole |
Specifications & Application Scenarios
Specifications: The AC3M0015065D is a high-current-density 650V SiC MOSFET rated for 122A. It achieves an ultra-low on-resistance of 15mΩ. Designed for a 15V gate drive (-8V/+19V max), it has a Vgs(th) of 2.4V. The device has a total gate charge of 190nC and an input capacitance of 4960pF. It can handle 420W and operates at junction temperatures up to 175°C.
Application Scenarios: This MOSFET is a cornerstone for high-efficiency, medium-voltage power conversion. It is ideally deployed in three-phase motor drives for industrial automation and EVs, in high-output server/telecom PSUs, and in bidirectional DC-DC converters for battery energy storage systems (BESS).
Application Scenarios: This MOSFET is a cornerstone for high-efficiency, medium-voltage power conversion. It is ideally deployed in three-phase motor drives for industrial automation and EVs, in high-output server/telecom PSUs, and in bidirectional DC-DC converters for battery energy storage systems (BESS).
Сопутствующие товары
АДРЕС：
17F, North Industrial Building, No. 3003 Shennan Road, Futian District, Shenzhen, China
TEL：
+86-755-83-666-556
+86-755-83-666-557
+86-755-83-666-558
Электронная почта：
apsemi@a-semi.com
sales@a-semi.com
design@a-semi.com
©2026 APSEMI CO., LTD