| Modèle | AC3M0045065D |
|---|---|
| Description | SiC MOSFET N-CH 650V 50A TO-247-3 |
| Technology | Silicon Carbide |
| FET Type | N-Channel |
| Paquet | TO-247-3 |
| Drain to Source Voltage | 650V |
| Continuous Drain Current (ID) | 50A |
| Gate Drive Voltage (Vgs) | 15V |
| Vgs (Max) | -8V, +19V |
| Rds(on) | 45mΩ |
| Vgs(th) | 2.6V |
| Gate Charge (Qg) | 61 nC |
| Input Capacitance (Ciss) | 1520 pF |
| Max Power Dissipation | 178W |
| Operating Temperature (°C) | -40 ~ 175 |
| Type de montage | Trou de passage |
Specifications & Application Scenarios
Specifications: The AC3M0045065D is a 650V, 50A SiC MOSFET with a 45mΩ on-resistance. Designed for 15V/-8V gate drive, it has a Vgs(th) of 2.6V. It has a total gate charge of 61nC. Rated for 178W, it operates up to 175°C.
Application Scenarios: This device is ideal for upgrading 650V designs for higher efficiency. It is well-suited for main switches in telecom rectifiers, motor drives in high-end home appliances, and in PC power supplies.
Application Scenarios: This device is ideal for upgrading 650V designs for higher efficiency. It is well-suited for main switches in telecom rectifiers, motor drives in high-end home appliances, and in PC power supplies.
Produits apparentés
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