| Модель |
AC3M0045065D |
|---|---|
| Описание |
SiC MOSFET N-CH 650V 50A TO-247-3 |
| Technology |
Silicon Carbide |
| FET Type |
N-Channel |
| Пакет |
TO-247-3 |
| Drain to Source Voltage |
650V |
| Continuous Drain Current (ID) |
50A |
| Gate Drive Voltage (Vgs) |
15V |
| Vgs (Max) |
-8V, +19V |
| Rds(on) |
45mΩ |
| Vgs(th) |
2.6V |
| Gate Charge (Qg) |
61 nC |
| Input Capacitance (Ciss) |
1520 pF |
| Max Power Dissipation |
178W |
| Operating Temperature (°C) |
-40 ~ 175 |
| Тип крепления |
Through Hole |
Specifications & Application Scenarios
Specifications: The AC3M0045065D is a 650V, 50A SiC MOSFET with a 45mΩ on-resistance. Designed for 15V/-8V gate drive, it has a Vgs(th) of 2.6V. It has a total gate charge of 61nC. Rated for 178W, it operates up to 175°C.
Application Scenarios: This device is ideal for upgrading 650V designs for higher efficiency. It is well-suited for main switches in telecom rectifiers, motor drives in high-end home appliances, and in PC power supplies.
Application Scenarios: This device is ideal for upgrading 650V designs for higher efficiency. It is well-suited for main switches in telecom rectifiers, motor drives in high-end home appliances, and in PC power supplies.
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