Specifications: The APV188G1EH is the SMD-5 version of a high-voltage, medium-current SiC PhotoMOS SSR. This SPST-NO device handles 450mA at 1800V AC/DC, with 1.8惟 on-state resistance. It provides 5000Vrms isolation and 750渭s/50渭s switching. Operating from -40掳C to 85掳C, it is controlled by 1.33-1.5VDC. Application Scenarios: Engineered for the same cutting-edge high-power, high-voltage applications as the DIP version but in a surface-mount package. It is suited for the miniaturization of next-generation medical imaging systems, compact high-voltage power supplies, and dense industrial power modules where SiC performance, high isolation, and a small form factor are required for automated manufacturing.