APSEMI PN

APV217G2E

Circuito

1 Forma A (SPST-NO)

Descrição

SSR RELAY SPST-NO 2A 150V, DIP-6

Corrente de carga

2.0A

Tipo de montagem

Furo passante

On-State Resistance (Max)

0.12Ω

Tipo de saída

AC, DC

Embalagem

DIP-6

Packaging

Tube

Série

Photo MOS Solid State Relays

Desligar

350us

Ligar

250us

Voltage-Input

1.2 ~ 1.4VDC

Tensão - Carga

0V~150V

Specifications & Application Scenarios

Specifications: The APV217G2E is a high-current, low-loss PhotoMOS SSR in a DIP-6 package. This 1 Form A (SPST-NO) device is rated for 2.0A at 150V AC/DC. It features an ultra-low 0.12惟 on-state resistance, provides 5000Vrms isolation, and switches with 250渭s (on) and 350渭s (off) times. It operates from -40掳C to 85掳C with 1.2-1.4VDC input. Application Scenarios: Engineered for high-efficiency switching of substantial loads. Perfect for driving high-power solenoids, contactors, small motors, or LED arrays in industrial automation, power management systems, stage lighting, and automotive test benches. The low on-resistance minimizes heat, and the DIP package facilitates good thermal performance in high-current applications.

Produtos relacionados

ENDEREÇO:

17F, North Industrial Building, No. 3003 Shennan Road, Futian District, Shenzhen, China

TEL:

+86-755-83-666-556
+86-755-83-666-557
+86-755-83-666-558

E-mail:

apsemi@a-semi.com
sales@a-semi.com
design@a-semi.com

©2026 APSEMI CO.,LTD