APSEMI PN

APV259AE

Circuito

1 Forma A (SPST-NO)

Descrição

SiC SSR RELAY SPST-NO 30mA 1200V, DIP-6

Corrente de carga

30mA

Tipo de montagem

Furo passante

On-State Resistance (Max)

85Ω

Tipo de saída

AC, DC

Embalagem

DIP-6

Packaging

Tube

Série

Photo MOS Solid State Relays

Desligar

20us

Ligar

250us

Voltage-Input

1.1 ~ 1.5VDC

Tensão - Carga

0V~1200V

Specifications & Application Scenarios

Specifications: The APV259AE is a high-voltage Silicon Carbide (SiC) PhotoMOS SSR in a DIP-6 through-hole package. It is a 1 Form A (SPST-NO) relay capable of switching up to 1200V AC/DC with a 30mA current rating. It has an 85Ω on-state resistance, provides 5000Vrms isolation, and switches with 250μs (turn-on) and a fast 20μs (turn-off) time. It is designed for harsh environments with an operating range of -40°C to 85℃ and is controlled by 1.1-1.5VDC. Application Scenarios: Targeting high-voltage, low-current applications that demand the superior reliability and performance of SiC technology. Ideal for medical equipment like electrosurgical units, high-voltage power supply control and monitoring, industrial insulation testers, photomultiplier tube and CRT anode supplies, and any application where high breakdown voltage, fast switching, and long-term stability at extreme potentials are critical.

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