| Модель |
AC3M0032120K |
|---|---|
| Описание |
SiC MOSFET N-CH 1200V 64A TO-247-4 |
| Technology |
Silicon Carbide |
| FET Type |
N-Channel |
| Пакет |
TO-247-4 |
| Drain to Source Voltage |
1200V |
| Continuous Drain Current (ID) |
64A |
| Gate Drive Voltage (Vgs) |
15V |
| Vgs (Max) |
+15V, -4V |
| Rds(on) |
32mΩ |
| Vgs(th) |
2.5V |
| Gate Charge (Qg) |
116nC |
| Input Capacitance (Ciss) |
3180 pF |
| Max Power Dissipation |
288W |
| Operating Temperature (°C) |
-40 ~ 175 |
| Тип крепления |
Through Hole |
Specifications & Application Scenarios
Specifications: The AC3M0032120K is the TO-247-4 Kelvin source version, utilizing the same +15V/-4V gate drive. It shares the 32mΩ on-resistance and 288W rating. The Kelvin source ensures crisp switching transitions.
Application Scenarios: The enhanced switching performance makes this variant ideal for high-frequency resonant converter topologies, fast-switching applications like pulsed power modulators, and advanced digital control power supplies.
Application Scenarios: The enhanced switching performance makes this variant ideal for high-frequency resonant converter topologies, fast-switching applications like pulsed power modulators, and advanced digital control power supplies.
Сопутствующие товары
АДРЕС：
17F, North Industrial Building, No. 3003 Shennan Road, Futian District, Shenzhen, China
TEL：
+86-755-83-666-556
+86-755-83-666-557
+86-755-83-666-558
Электронная почта：
apsemi@a-semi.com
sales@a-semi.com
design@a-semi.com
©2026 APSEMI CO., LTD