| Модель |
AC3M0120090D |
|---|---|
| Описание |
SiC MOSFET N-CH 900V 24A TO-247-3 |
| Серия |
Silicon Carbide |
| FET Type |
N-Channel |
| DrainVoltage(Vdss) |
900V |
| Current |
24A |
| Drive Voltage |
15V |
| Vgs (Max) |
+18V, -8V |
| Rds On |
120mΩ |
| Vgs(th) |
2.1V |
| Gate Charge (Qg) |
19 nC |
| Input Capacitance (Ciss) |
366 pF |
| Power Dissipation |
98W |
| Рабочая температура (℃) |
-55°C ~ 150°C |
| Тип крепления |
Through Hole |
| Пакет |
TO-247-3 |
Specifications & Application Scenarios
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