| Модель | AC3M0350120D |
|---|---|
| Описание | SiC MOSFET N-CH 1200V 8A TO-247-3 |
| Technology | Silicon Carbide |
| FET Type | N-Channel |
| Пакет | TO-247-3 |
| Drain to Source Voltage | 1200V |
| Continuous Drain Current (ID) | 8A |
| Gate Drive Voltage (Vgs) | 15V |
| Vgs (Max) | -8V, +19V |
| Rds(on) | 350mΩ |
| Vgs(th) | 2.5V |
| Gate Charge (Qg) | 19 nC |
| Input Capacitance (Ciss) | 297 nC |
| Max Power Dissipation | 52W |
| Operating Temperature (°C) | -55 ~ 150 |
| Тип крепления | Through Hole |
Specifications & Application Scenarios
Specifications: The AC3M0350120D is a 1200V, 8A SiC MOSFET with a 350mΩ on-resistance. It is designed for 15V/-8V gate operation and has a Vgs(th) of 2.5V. The device has a moderate gate charge and is rated for 52W. It operates from -55°C to 150°C.
Application Scenarios: This MOSFET is suited for specialized, low-power applications requiring 1200V blocking. It can be used in PMT/APD bias supplies, electrostatic chuck power controls, and as a series isolation switch in high-voltage probe circuits.
Application Scenarios: This MOSFET is suited for specialized, low-power applications requiring 1200V blocking. It can be used in PMT/APD bias supplies, electrostatic chuck power controls, and as a series isolation switch in high-voltage probe circuits.
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