Specifications: The APV278G1E is the through-hole DIP-5 version of a very high-voltage, medium-current Silicon Carbide (SiC) PhotoMOS SSR. It is a 1 Form A (SPST-NO) relay capable of switching up to 1800V AC/DC with a 450mA current rating. It features a relatively low 1.8Ω on-state resistance, provides 5000Vrms isolation, and switches with 750μs (on) and 50μs (off) times. It operates from -40°C to 85℃ and is controlled by 1.33-1.5VDC.

Application Scenarios: Targeting the same specialized applications as the SMD version, but in a through-hole package suitable for prototyping, testing, or applications requiring enhanced thermal management or repairability. Ideal for development of medical imaging systems, high-power RF amplifiers, particle accelerator controls, and high-voltage pulse generators.