| Model | AC3M0016120D |
|---|---|
| Description | SiC MOSFET N-CH 1200V 117A TO-247-3 |
| Technology | Silicon Carbide |
| FET Type | N-Channel |
| Gói | TO-247-3 |
| Drain to Source Voltage | 1200V |
| Continuous Drain Current (ID) | 117A |
| Gate Drive Voltage (Vgs) | 15V |
| Vgs (Max) | -8V, +19V |
| Rds(on) | 16mΩ |
| Vgs(th) | 2.5V |
| Gate Charge (Qg) | 207 nC |
| Input Capacitance (Ciss) | 6085 pF |
| Max Power Dissipation | 556W |
| Operating Temperature (°C) | -40 ~ 175 |
| Mounting Type | Through Hole |
Specifications & Application Scenarios
Specifications: The AC3M0016120D represents high-end 1200V SiC technology, delivering 117A with a remarkably low on-resistance of 16mΩ. It operates with a 15V gate drive (-8V/+19V max) and has a Vgs(th) of 2.5V. The device's switching characteristics are defined by a 207nC total gate charge. It is built for extreme power handling (556W) and operates up to 175°C.
Application Scenarios: Engineered for the most demanding high-power conversion, this MOSFET is ideal for the main inverter bridge in multi-megawatt solar/energy storage inverters, power modules in EV fast-charging infrastructure, and primary switches in solid-state transformers (SST) for advanced grid applications.
Application Scenarios: Engineered for the most demanding high-power conversion, this MOSFET is ideal for the main inverter bridge in multi-megawatt solar/energy storage inverters, power modules in EV fast-charging infrastructure, and primary switches in solid-state transformers (SST) for advanced grid applications.
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