Specifications: The AC3M0016120D represents high-end 1200V SiC technology, delivering 117A with a remarkably low on-resistance of 16mΩ. It operates with a 15V gate drive (-8V/+19V max) and has a Vgs(th) of 2.5V. The device's switching characteristics are defined by a 207nC total gate charge. It is built for extreme power handling (556W) and operates up to 175°C.

Application Scenarios: Engineered for the most demanding high-power conversion, this MOSFET is ideal for the main inverter bridge in multi-megawatt solar/energy storage inverters, power modules in EV fast-charging infrastructure, and primary switches in solid-state transformers (SST) for advanced grid applications.