| Model |
AC3M0025065K |
|---|---|
| Description |
SiC MOSFET N-CH 650V 98A TO-247-4 |
| Technology |
Silicon Carbide |
| FET Type |
N-Channel |
| Gói |
TO-247-4 |
| Drain to Source Voltage |
650V |
| Continuous Drain Current (ID) |
98A |
| Gate Drive Voltage (Vgs) |
15V |
| Vgs (Max) |
+19V, -8V |
| Rds(on) |
25mΩ |
| Vgs(th) |
2.3V |
| Gate Charge (Qg) |
110 nC |
| Input Capacitance (Ciss) |
2622 pF |
| Max Power Dissipation |
330W |
| Operating Temperature (°C) |
-40 ~ 175 |
| Mounting Type |
Through Hole |
Specifications & Application Scenarios
Specifications: The AC3M0025065K is the TO-247-4 Kelvin source counterpart. It maintains the 25mΩ on-resistance and 330W rating. The separate gate return path minimizes parasitic inductance for cleaner and faster switching.
Application Scenarios: This package is selected for highest switching performance. It is ideal for multi-phase interleaved boost converters, high-frequency DC-DC converters for point-of-load applications, and circuits where multiple MOSFETs are paralleled for higher current.
Application Scenarios: This package is selected for highest switching performance. It is ideal for multi-phase interleaved boost converters, high-frequency DC-DC converters for point-of-load applications, and circuits where multiple MOSFETs are paralleled for higher current.
Related products
ĐỊA CHỈ：
Tầng 17, Tòa nhà Công nghiệp Bắc, Số 3003 Đường Shennan, Quận Futian, Thâm Quyến, Trung Quốc
Điện thoại：
+86-755-83-666-556
+86-755-83-666-557
+86-755-83-666-558
Email：
apsemi@a-semi.com
sales@a-semi.com
design@a-semi.com
©2026 APSEMI Công ty TNHH