| Model |
AC3M0060065D |
|---|---|
| Description |
SiC MOSFET N-CH 650V 38A TO-247-3 |
| Technology |
Silicon Carbide |
| FET Type |
N-Channel |
| Gói |
TO-247-3 |
| Drain to Source Voltage |
650V |
| Continuous Drain Current (ID) |
38A |
| Gate Drive Voltage (Vgs) |
15V |
| Vgs (Max) |
-8V, +19V |
| Rds(on) |
60mΩ |
| Vgs(th) |
2.3V |
| Gate Charge (Qg) |
43 nC |
| Input Capacitance (Ciss) |
975 pF |
| Max Power Dissipation |
150W |
| Operating Temperature (°C) |
-40 ~ 175 |
| Mounting Type |
Through Hole |
Specifications & Application Scenarios
Specifications: The AC3M0060065D is a 650V, 38A SiC MOSFET with a 60mΩ on-resistance. It operates with a 15V/-8V gate signal and has a Vgs(th) of 2.3V. The device features a low total gate charge of 43nC. Rated for 150W, it operates up to 175°C.
Application Scenarios: This MOSFET is a great choice for performance and cost balance. It is suitable for solar power optimizers, primary side of high-power adapters, and motor control in power tools and small appliances.
Application Scenarios: This MOSFET is a great choice for performance and cost balance. It is suitable for solar power optimizers, primary side of high-power adapters, and motor control in power tools and small appliances.
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