| Model |
AC3M0060065K |
|---|---|
| Description |
SiC MOSFET N-CH 650V 38A TO-247-4 |
| Technology |
Silicon Carbide |
| FET Type |
N-Channel |
| Gói |
TO-247-4 |
| Drain to Source Voltage |
650V |
| Continuous Drain Current (ID) |
38A |
| Gate Drive Voltage (Vgs) |
15V |
| Vgs (Max) |
-8V, +19V |
| Rds(on) |
60mΩ |
| Vgs(th) |
2.3V |
| Gate Charge (Qg) |
44 nC |
| Input Capacitance (Ciss) |
975 pF |
| Max Power Dissipation |
150W |
| Operating Temperature (°C) |
-40 ~ 175 |
| Mounting Type |
Through Hole |
Specifications & Application Scenarios
Specifications: The AC3M0060065K is the TO-247-4 packaged version. It maintains the 60mΩ on-resistance and 150W rating. The Kelvin source pin provides clean gate drive.
Application Scenarios: This package is preferred in noise-sensitive or high-frequency designs. It is ideal for switching stage in high-fidelity Class-D audio amplifiers, precision laboratory power supplies, and RF modulation circuits.
Application Scenarios: This package is preferred in noise-sensitive or high-frequency designs. It is ideal for switching stage in high-fidelity Class-D audio amplifiers, precision laboratory power supplies, and RF modulation circuits.
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