| الطراز | AC3M0060065K |
|---|---|
| الوصف | SiC MOSFET N-CH 650V 38A TO-247-4 |
| Technology | Silicon Carbide |
| FET Type | N-Channel |
| الحزمة | TO-247-4 |
| Drain to Source Voltage | 650V |
| Continuous Drain Current (ID) | 38A |
| Gate Drive Voltage (Vgs) | 15V |
| Vgs (Max) | -8V, +19V |
| Rds(on) | 60mΩ |
| Vgs(th) | 2.3V |
| Gate Charge (Qg) | 44 nC |
| سعة الإدخال (Ciss) | 975 pF |
| Max Power Dissipation | 150W |
| Operating Temperature (°C) | -40 ~ 175 |
| نوع التركيب | Through Hole |
Specifications & Application Scenarios
Specifications: The AC3M0060065K is the TO-247-4 packaged version. It maintains the 60mΩ on-resistance and 150W rating. The Kelvin source pin provides clean gate drive.
Application Scenarios: This package is preferred in noise-sensitive or high-frequency designs. It is ideal for switching stage in high-fidelity Class-D audio amplifiers, precision laboratory power supplies, and RF modulation circuits.
Application Scenarios: This package is preferred in noise-sensitive or high-frequency designs. It is ideal for switching stage in high-fidelity Class-D audio amplifiers, precision laboratory power supplies, and RF modulation circuits.
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