Model

AC3M0060065K

说明

SiC MOSFET N-CH 650V 38A TO-247-4

Technology

Silicon Carbide

FET Type

N-Channel

包装

TO-247-4

Drain to Source Voltage

650V

Continuous Drain Current (ID)​

38A

Gate Drive Voltage (Vgs)

15V

Vgs (Max)

-8V, +19V

Rds(on)

60mΩ

Vgs(th)

2.3V

Gate Charge (Qg)

44 nC

Input Capacitance (Ciss)

975 pF

Max Power Dissipation

150W

Operating Temperature (°C)

-40 ~ 175

安装类型

Through Hole

Specifications & Application Scenarios

Specifications: The AC3M0060065K is the TO-247-4 packaged version. It maintains the 60mΩ on-resistance and 150W rating. The Kelvin source pin provides clean gate drive.

Application Scenarios: This package is preferred in noise-sensitive or high-frequency designs. It is ideal for switching stage in high-fidelity Class-D audio amplifiers, precision laboratory power supplies, and RF modulation circuits.

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