| Model |
AC3M0065100K |
|---|---|
| Description |
SiC MOSFET N-CH 1000V 33A TO-247-4 |
| Technology |
Silicon Carbide |
| FET Type |
N-Channel |
| Gói |
TO-247-4 |
| Drain to Source Voltage |
1000V |
| Continuous Drain Current (ID) |
33A |
| Gate Drive Voltage (Vgs) |
15V |
| Vgs (Max) |
+19V, -8V |
| Rds(on) |
65mΩ |
| Vgs(th) |
2.1V |
| Gate Charge (Qg) |
33 nC |
| Input Capacitance (Ciss) |
710 pF |
| Max Power Dissipation |
115W |
| Operating Temperature (°C) |
-55 ~ 150 |
| Mounting Type |
Through Hole |
Specifications & Application Scenarios
Specifications: The AC3M0065100K is a 1000V, 33A SiC MOSFET in a TO-247-4 Kelvin source package. It features a 65mΩ on-resistance and a 33nC gate charge. Rated for 115W, it operates from -55°C to 150°C.
Application Scenarios: The combination of 1000V rating, Kelvin source, and fast switching makes this ideal for high-voltage, high-frequency auxiliary power supplies within EV traction inverters, switching elements in high-power laser diode drivers, and advanced scientific equipment power supplies.
Application Scenarios: The combination of 1000V rating, Kelvin source, and fast switching makes this ideal for high-voltage, high-frequency auxiliary power supplies within EV traction inverters, switching elements in high-power laser diode drivers, and advanced scientific equipment power supplies.
Related products
ĐỊA CHỈ：
Tầng 17, Tòa nhà Công nghiệp Bắc, Số 3003 Đường Shennan, Quận Futian, Thâm Quyến, Trung Quốc
Điện thoại：
+86-755-83-666-556
+86-755-83-666-557
+86-755-83-666-558
Email：
apsemi@a-semi.com
sales@a-semi.com
design@a-semi.com
©2026 APSEMI Công ty TNHH