| Model |
AC3M0075120D |
|---|---|
| Description |
SiC MOSFET N-CH 1200V 33A TO-247-3 |
| Technology |
Silicon Carbide |
| FET Type |
N-Channel |
| Gói |
TO-247-3 |
| Drain to Source Voltage |
1200V |
| Continuous Drain Current (ID) |
33A |
| Gate Drive Voltage (Vgs) |
15V |
| Vgs (Max) |
+19V, -8V |
| Rds(on) |
75mΩ |
| Vgs(th) |
2.5V |
| Gate Charge (Qg) |
55 nC |
| Input Capacitance (Ciss) |
1305 pF |
| Max Power Dissipation |
136W |
| Operating Temperature (°C) |
-40 ~ 175 |
| Mounting Type |
Through Hole |
Specifications & Application Scenarios
Specifications: The AC3M0075120D is a 1200V, 33A SiC MOSFET with a 75mΩ on-resistance. It operates with a +19V/-8V gate drive and has a Vgs(th) of 2.5V. The total gate charge is 55nC. Rated for 136W, it operates up to 175°C.
Application Scenarios: This cost-optimized 1200V MOSFET is suitable for solar micro-inverters, active clamp switch in flyback converters, and as a series-pass element in electronic loads.
Application Scenarios: This cost-optimized 1200V MOSFET is suitable for solar micro-inverters, active clamp switch in flyback converters, and as a series-pass element in electronic loads.
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