| Model | AC3M0075120K |
|---|---|
| Description | SiC MOSFET N-CH 1200V 33A TO-247-4 |
| Technology | Silicon Carbide |
| FET Type | N-Channel |
| Gói | TO-247-4 |
| Drain to Source Voltage | 1200V |
| Continuous Drain Current (ID) | 33A |
| Gate Drive Voltage (Vgs) | 15V |
| Vgs (Max) | +19V, -8V |
| Rds(on) | 75mΩ |
| Vgs(th) | 2.5V |
| Gate Charge (Qg) | 51 nC |
| Input Capacitance (Ciss) | 1305 pF |
| Max Power Dissipation | 136W |
| Operating Temperature (°C) | -40 ~ 175 |
| Mounting Type | Through Hole |
Specifications & Application Scenarios
Specifications: The AC3M0075120K is the TO-247-4 Kelvin source version. It maintains the 75mΩ on-resistance and 136W rating. The listed gate charge is 51nC.
Application Scenarios: The 4-pin package is preferable for maximum high-frequency performance. It is well-suited for high-frequency resonant gate driver circuits, pulsed power modulators, and advanced digital control power supplies.
Application Scenarios: The 4-pin package is preferable for maximum high-frequency performance. It is well-suited for high-frequency resonant gate driver circuits, pulsed power modulators, and advanced digital control power supplies.
Related products
ĐỊA CHỈ：
Tầng 17, Tòa nhà Công nghiệp Bắc, Số 3003 Đường Shennan, Quận Futian, Thâm Quyến, Trung Quốc
Điện thoại：
+86-755-83-666-556
+86-755-83-666-557
+86-755-83-666-558
Email：
apsemi@a-semi.com
sales@a-semi.com
design@a-semi.com
©2026 APSEMI Công ty TNHH