| Model |
AC3M0075120K |
|---|---|
| 说明 |
SiC MOSFET N-CH 1200V 33A TO-247-4 |
| Technology |
Silicon Carbide |
| FET Type |
N-Channel |
| 包装 |
TO-247-4 |
| Drain to Source Voltage |
1200V |
| Continuous Drain Current (ID) |
33A |
| Gate Drive Voltage (Vgs) |
15V |
| Vgs (Max) |
+19V, -8V |
| Rds(on) |
75mΩ |
| Vgs(th) |
2.5V |
| Gate Charge (Qg) |
51 nC |
| Input Capacitance (Ciss) |
1305 pF |
| Max Power Dissipation |
136W |
| Operating Temperature (°C) |
-40 ~ 175 |
| 安装类型 |
Through Hole |
Specifications & Application Scenarios
Specifications: The AC3M0075120K is the TO-247-4 Kelvin source version. It maintains the 75mΩ on-resistance and 136W rating. The listed gate charge is 51nC.
Application Scenarios: The 4-pin package is preferable for maximum high-frequency performance. It is well-suited for high-frequency resonant gate driver circuits, pulsed power modulators, and advanced digital control power supplies.
Application Scenarios: The 4-pin package is preferable for maximum high-frequency performance. It is well-suited for high-frequency resonant gate driver circuits, pulsed power modulators, and advanced digital control power supplies.
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