| Model |
AC3M0120065D |
|---|---|
| 说明 |
SiC MOSFET N-CH 650V 23A TO-247-3 |
| 系列 |
Silicon Carbide |
| FET Type |
N-Channel |
| DrainVoltage(Vdss) |
650V |
| Current |
23A |
| Drive Voltage |
15V |
| Vgs (Max) |
+19V, -8V |
| Rds On |
120mΩ |
| Vgs(th) |
2.3V |
| Gate Charge (Qg) |
26 nC |
| Input Capacitance (Ciss) |
588 pF |
| Power Dissipation |
97W |
| Operating Temperature (℃) |
-40°C ~ 175°C |
| 安装类型 |
Through Hole |
| 包装 |
TO-247-3 |
Specifications & Application Scenarios
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