| Model | AC3M0120065K |
|---|---|
| 说明 | SiC MOSFET N-CH 650V 23A TO-247-4 |
| Technology | Silicon Carbide |
| FET Type | N-Channel |
| 包装 | TO-247-4 |
| Drain to Source Voltage | 650V |
| Continuous Drain Current (ID) | 23A |
| Gate Drive Voltage (Vgs) | 15V |
| Vgs (Max) | +19V, -8V |
| Rds(on) | 120mΩ |
| Vgs(th) | 2.3V |
| Gate Charge (Qg) | 26 nC |
| Input Capacitance (Ciss) | 588 pF |
| Max Power Dissipation | 97W |
| Operating Temperature (°C) | -40 ~ 175 |
| 安装类型 | Through Hole |
Specifications & Application Scenarios
Specifications: The AC3M0120065K is the TO-247-4 packaged version. It shares the 120mΩ on-resistance, 26nC gate charge, and 97W rating. The Kelvin source ensures optimal gate drive conditions.
Application Scenarios: This package is chosen for lowest switching loss and highest frequency operation. It is suitable for high-frequency DC-DC converters in point-of-load applications, envelope tracking power supplies in 5G base stations, and precision test equipment.
Application Scenarios: This package is chosen for lowest switching loss and highest frequency operation. It is suitable for high-frequency DC-DC converters in point-of-load applications, envelope tracking power supplies in 5G base stations, and precision test equipment.
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