| Model | AC3M0120090D |
|---|---|
| 说明 | SiC MOSFET N-CH 900V 24A TO-247-3 |
| Technology | Silicon Carbide |
| FET Type | N-Channel |
| 包装 | TO-247-3 |
| Drain to Source Voltage | 900V |
| Continuous Drain Current (ID) | 24A |
| Gate Drive Voltage (Vgs) | 15V |
| Vgs (Max) | +18V, -8V |
| Rds(on) | 120mΩ |
| Vgs(th) | 2.1V |
| Gate Charge (Qg) | 19 nC |
| Input Capacitance (Ciss) | 366 pF |
| Max Power Dissipation | 98W |
| Operating Temperature (°C) | -55 ~ 150 |
| 安装类型 | Through Hole |
Specifications & Application Scenarios
Specifications: The AC3M0120090D is a 900V, 24A SiC MOSFET with a 120mΩ on-resistance. It operates with a +18V/-8V gate drive and has a low Vgs(th) of 2.1V. Its standout characteristic is an exceptionally low total gate charge of 19nC. Rated for 98W, it operates from -55°C to 150°C.
Application Scenarios: This MOSFET is engineered for fast switching at high voltage. It is ideal for Marx generators and pulse-forming networks, switch in capacitive discharge ignition (CDI) systems, and high-voltage probe power supplies.
Application Scenarios: This MOSFET is engineered for fast switching at high voltage. It is ideal for Marx generators and pulse-forming networks, switch in capacitive discharge ignition (CDI) systems, and high-voltage probe power supplies.
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