| Model |
AC3M0120100K |
|---|---|
| Description |
SiC MOSFET N-CH 1000V 24A TO-247-4 |
| Technology |
Silicon Carbide |
| FET Type |
N-Channel |
| Gói |
TO-247-4 |
| Drain to Source Voltage |
1000V |
| Continuous Drain Current (ID) |
24A |
| Gate Drive Voltage (Vgs) |
15V |
| Vgs (Max) |
-8V, +19V |
| Rds(on) |
120mΩ |
| Vgs(th) |
2.1V |
| Gate Charge (Qg) |
20 nC |
| Input Capacitance (Ciss) |
366 pF |
| Max Power Dissipation |
92W |
| Operating Temperature (°C) |
-55 ~ 150 |
| Mounting Type |
Through Hole |
Specifications & Application Scenarios
Specifications: The AC3M0120100K is a 1000V, 24A SiC MOSFET in a TO-247-4 Kelvin source package. It maintains a 120mΩ on-resistance and a 20nC gate charge. Rated for 92W, it operates from -55°C to 150°C.
Application Scenarios: The combination of 1000V blocking, fast switching, and optimized package makes this a specialized component. It is perfect for high-side switch in half-bridge configurations for 800V systems, RF power amplifier modulation, and scientific instrumentation.
Application Scenarios: The combination of 1000V blocking, fast switching, and optimized package makes this a specialized component. It is perfect for high-side switch in half-bridge configurations for 800V systems, RF power amplifier modulation, and scientific instrumentation.
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