| Model | AC3M0015065K |
|---|---|
| Description | SiC MOSFET N-CH 650V 122A TO-247-4 |
| Technology | Silicon Carbide |
| FET Type | N-Channel |
| Gói | TO-247-4 |
| Drain to Source Voltage | 650V |
| Continuous Drain Current (ID) | 122A |
| Gate Drive Voltage (Vgs) | 15V |
| Vgs (Max) | -8V, +19V |
| Rds(on) | 15mΩ |
| Vgs(th) | 2.3V |
| Gate Charge (Qg) | 190 nC |
| Input Capacitance (Ciss) | 4960 pF |
| Max Power Dissipation | 420W |
| Operating Temperature (°C) | -40 ~ 175 |
| Mounting Type | Through Hole |
Specifications & Application Scenarios
Specifications: The AC3M0015065K is the TO-247-4 (Kelvin source) version of the 650V/122A SiC MOSFET. It retains the 15mΩ on-resistance. The separate Kelvin source pin minimizes parasitic source inductance, leading to faster switching, reduced gate oscillation, and lower switching losses.
Application Scenarios: This package is essential for applications demanding maximum switching performance. It is the preferred choice for paralleling MOSFETs in ultra-high-current phases (e.g., EV traction inverters), and in high-frequency, hard-switching topologies like totem-pole bridgeless PFC in advanced server PSUs.
Application Scenarios: This package is essential for applications demanding maximum switching performance. It is the preferred choice for paralleling MOSFETs in ultra-high-current phases (e.g., EV traction inverters), and in high-frequency, hard-switching topologies like totem-pole bridgeless PFC in advanced server PSUs.
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