| Model | AC3M0160120D |
|---|---|
| Description | SiC MOSFET N-CH 1200V 18A TO-247-3 |
| Technology | Silicon Carbide |
| FET Type | N-Channel |
| Gói | TO-247-3 |
| Drain to Source Voltage | 1200V |
| Continuous Drain Current (ID) | 18A |
| Gate Drive Voltage (Vgs) | 15V |
| Vgs (Max) | -8V, +19V |
| Rds(on) | 160mΩ |
| Vgs(th) | 2.8V |
| Gate Charge (Qg) | 36 nC |
| Input Capacitance (Ciss) | 591 pF |
| Max Power Dissipation | 98W |
| Operating Temperature (°C) | -55 ~ 150 |
| Mounting Type | Through Hole |
Specifications & Application Scenarios
Specifications: The AC3M0160120D is a rugged 1200V, 18A SiC MOSFET with a 160mΩ on-resistance. It operates with a 15V/-8V gate drive and has a Vgs(th) of 2.8V. The device has a low total gate charge of 36nC. Rated for 98W, it operates from -55°C to 150°C.
Application Scenarios: This MOSFET is ideal for harsh environment applications. It is suitable for downhole drilling equipment power converters, aviation/aerospace power systems, and as a solid-state relay replacement for high-voltage DC switching.
Application Scenarios: This MOSFET is ideal for harsh environment applications. It is suitable for downhole drilling equipment power converters, aviation/aerospace power systems, and as a solid-state relay replacement for high-voltage DC switching.
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